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Titlebook: Silicon-on-Insulator Technology; Materials to VLSI Jean-Pierre Colinge Book 1997Latest edition Springer-Verlag US 1997 CMOS.DRAM.Leistungsf

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书目名称Silicon-on-Insulator Technology
副标题Materials to VLSI
编辑Jean-Pierre Colinge
视频video
图书封面Titlebook: Silicon-on-Insulator Technology; Materials to VLSI Jean-Pierre Colinge Book 1997Latest edition Springer-Verlag US 1997 CMOS.DRAM.Leistungsf
描述.Silicon-on-Insulator Technology: Materials to VLSI, 2ndEdition. describes the different facets of SOI technology. SOI chipsare now commercially available and SOI wafer manufacturers have gonepublic. SOI has finally made it out of the academic world and is now abig concern for every major semiconductor company. SOI technology hasindeed deserved serious recognition: high-temperature (400°C),extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-voltDRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuitshave been demonstrated. Strategic choices in favor of the use of SOIfor low-voltage, low-power portable systems have been made by severalmajor semiconductor manufacturers. ..Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition.presents a complete and state-of-the-art review of SOI materials,devices and circuits. SOI fabrication and characterization techniques,SOI device processing, the physics of the SOI MOSFET as well as thatof SOI other devices, and the performances of SOI circuits arediscussed in detail. .The SOI specialist will find this book invaluable as a source ofcompiled references covering the different aspects of SOI technology.For the non-speci
出版日期Book 1997Latest edition
关键词CMOS; DRAM; Leistungsfeldeffekttransistor; RAM; VLSI; field-effect transistor; metal oxide semiconductur f
版次2
doihttps://doi.org/10.1007/978-1-4757-2611-4
isbn_ebook978-1-4757-2611-4
copyrightSpringer-Verlag US 1997
The information of publication is updating

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https://doi.org/10.1007/978-1-4757-2611-4CMOS; DRAM; Leistungsfeldeffekttransistor; RAM; VLSI; field-effect transistor; metal oxide semiconductur f
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Springer-Verlag US 1997
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Book 1997Latest editionI device processing, the physics of the SOI MOSFET as well as thatof SOI other devices, and the performances of SOI circuits arediscussed in detail. .The SOI specialist will find this book invaluable as a source ofcompiled references covering the different aspects of SOI technology.For the non-speci
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Jean-Pierre Colingension or the P-dimension. Moreover, we will see in Chapter 8 that, under suitable conditions, a little prior knowledge about the probability does not really help, in the following sense: Learning when there is so-called nonparametric uncertainty about the underlying probability measure is as difficu
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