Titlebook: Silicon Analog Components; Device Design, Proce Badih El-Kareh,Lou N. Hutter Textbook 2020Latest edition Springer Nature Switzerland AG 202

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Bipolar and Junction Field-Effect Transistors,tly use the component in bipolar and BiCMOS applications. It is also important to understand bipolar effects in CMOS, such as the subthreshold behavior, snapback, and latch-up, and to identify process and design techniques to modify their impact on circuit performance. Similarly, a discussion of int

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Analog/RF CMOS, digital CMOS on operating voltage level, reduced low-frequency noise, high output resistance, low component mismatch, and high linearity. Thus, modifications must be made to the basic digital structure to satisfy analog circuit needs. In contrast, the characteristics of RF CMOS are essentially the

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High-Voltage and Power Transistors,oth cases, the drain is extended with a lightly doped region, referred to as the ., to sustain the high voltage. The chapter begins with an analysis of the drift region and its optimization, typically by reduced surface field (RESURF) techniques. The transistor switching performance is then analyzed

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Chip Reliability, to reliability engineering. An overview of important failure mechanisms of components and methods to reduce their impact on chip reliability is then presented. The sections include dielectric reliability, electro and stress migration, hot-carrier reliability, latch-up, bias-temperature instabilitie

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