Titlebook: Semiconductor Surfaces and Interfaces; Winfried Mönch Book 2001Latest edition Springer-Verlag Berlin Heidelberg 2001 Materials science and

infelicitous

{100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide,ow the same behavior. Furthermore, the surface band structure of both types of semiconductors is semiconducting. On compound semiconductors this is due to the large energy difference between the dangling bonds at surface cations and anions. This causes the dangling bonds to become completely occupie

Dysarthria

Glossy

,Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces,, respectively, after annealing treatments at elevated temperatures. The common feature of these large-unit-mesh reconstructions is the reduction of the number of dangling bonds per surface unit area by a factor of 2.6 and 2, respectively. The correlated lowering of the total energy is achieved by a

抛射物

Phase Transitions on Silicon and Germanium {111} Surfaces, Ge(111)–c(2 × 8) structures, respectively, at elevated temperatures. At even higher temperatures, a now reversible phase transition to a “1 × 1” structure occurs. For both silicon and germanium {111} surfaces, the “1 × 1” structures consist of a quarter monolayer of disordered adatoms. During conve

含铁

误传

Monovalent Adatoms,atom-induced surface dipoles and surface states. The existence of adatom-induced surface dipoles indicates the chemical bonds between adsorbate and substrate atoms to be partly ionic and leads to a variation of the ionization energy of the semiconductor substrate. As a consequence of adatom-induced

有危险

Group-III Adatoms on Silicon Surfaces,.. sites. Each of the trivalent adatoms thus saturates the dangling bonds of three silicon surface atoms. Boron, on the other hand, has a much smaller covalent radius than silicon and, therefore, bonds between boron atoms occupying .. sites and nearest-neighbor silicon atoms would be strongly elonga

不成比例

Innovative

,Oxidation of Silicon and III–V Compound Semiconductors,high stability, low diffusion coefficients for specific dopants in SiO., a high dielectric strength in the bulk of SiO. films, and a low density of interface states at SiO./Si interfaces are essential in devices such as, for example, metal-oxide-silicon field-effect transistors. Unfortunately, nativ

Feckless

Surface Passivation by Adsorbates and Surfactants,ad-sorbates. Hydrogen-coverage, for example, increases the initial sticking coefficient of oxygen, on silicon surfaces by a factor of approximately 10. with respect to what is found on clean silicon surfaces. This behavior is explained by the larger Si-H bond energies in comparison with the Si-Si bo