Titlebook: Semiconductor Surfaces and Interfaces; Winfried Mönch Book 2001Latest edition Springer-Verlag Berlin Heidelberg 2001 Materials science and

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,Oxidation of Silicon and III–V Compound Semiconductors,terface states at SiO./Si interfaces are essential in devices such as, for example, metal-oxide-silicon field-effect transistors. Unfortunately, native oxides of III–V compound semiconductors possess none of these favorable properties.

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Book 2001Latest editionduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where a

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Introduction,, respectively. Surface states on clean surfaces originate from dangling bonds and on adsorbate-covered surfaces from bonds between adsorbate and semiconductor-surface atoms. At abrupt metal-semiconductor interfaces, the wavefunctions of those metal electrons, which energetically overlap the semicon

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Surface Space-Charge Region in Thermal Equilibrium,aces and interfaces. The resulting band bending is obtained by solving Pois-son’s equation. In thermal equilibrium, the space charge is balanced by a net charge in electronic surface or interface states. Depending on the sign and the magnitude of the surface band-bending, accumulation, depletion, an

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Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium,tral or become charged either positively or negatively, respectively. A charging of surface states necessarily results in the formation of a space-charge layer beneath the surface and, in thermal equilibrium, the surface band-bending adjusts such as to satisfy the condition of surface charge neutral

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Interface States,onductor contact, the characteristic quantity is the barrier height, which measures the energy distance between the Fermi level and the edge of the respective majority-carrier band of the semiconductor at the interface, while the discontinuities of the valence- and the conduction-band edges are the

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