Titlebook: Semiconductor Surfaces and Interfaces; Winfried Mönch Book 2001Latest edition Springer-Verlag Berlin Heidelberg 2001 Materials science and

DECRY

expansive

缺乏

油毡

{100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide,pied and at the other, empty. At low temperatures, these tilted dimers arrange in a c(4 × 2) reconstruction which exhibits an order-disorder transition below room temperature. Consequently, a 2 × 1 reconstruction is observed at room temperature.

Ardent

洞穴

Phase Transitions on Silicon and Germanium {111} Surfaces,ased elastic constants at high temperatures. Then the lowering of the band-structure energy by a reduction of the density of adatoms by a factor of 2 compared with a factor of 2.6 for the 7×7 reconstruction obviously suffices to overcompensate the strain energy associated with the existence of adatoms only.

Conscientious

MARS

Surface Space-Charge Region in Non-Equilibrium,tor, positive or negative charge is induced into the semiconductor surface. In such field-effect experiments, variations of band bending can be observed via measurements of surface conductance which probes the surface excess of mobile carriers.

摇曳的微光

{111} Surfaces of Compounds with Zincblende Structure, atoms of the second layer. The atomic arrangement is thus similar to the Ga-As zigzag chains on cleaved (110)–1 × 1 surfaces. The GaAs(111)–2 × 2 reconstruction, on the other hand, consists of As-trimers on a complete As layer beneath. The presence of As vacancies is excluded since their formation is endothermic on such surfaces.

换话题

Group-III Adatoms on Silicon Surfaces, covalent radius than silicon and, therefore, bonds between boron atoms occupying .. sites and nearest-neighbor silicon atoms would be strongly elongated. Substitutional 65 sites beneath silicon atoms in .. sites are energetically much more favorable configurations for the small boron atoms.