Titlebook: Semiconductor Lithography; Principles, Practice Wayne M. Moreau Book 1988 Plenum Press, New York 1988 circuit.electrical engineering.integr

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Surface Preparation and Coating,he intended purpose of resisting heat, radiation, physical forces, or chemical action. Next, the surface is cleaned to remove contaminants and a primer is applied to improve the adhesion of the paint film. Then, a variety of coating techniques such as spray, roll, dip, and spin can be used to apply

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FIS

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圆锥

Additive Processes,tate. In some cases, the solid is added to the resist and the resist is removed to deposit the solid. Metal films are most frequently deposited by lift-off or electroplating techniques. In Fig. 12-1-1, a panorama of additive processes using resists is shown. Some of the processes such as electroplat

强化

Subtractive Etching, early attempt at anisotropic etching of amorphous materials. Since isotropic etching involves neutral species and generally proceeds to etch laterally and vertically in regions defined by a resist mask, the width of the desired feature can be widened by isotropic subtractive etching by as much as t

FRAUD

不规则的跳动

Process Controls,lds, reproducible processing,. and high productivity. are production objectives that offset the high cost of clean rooms and lithography process equipment. In semiconductor device fabrication, the final electrical yields of good chips versus the total number of fabricated chips can be as low as a fe

Trypsin

Nonresist Processes,ith “resistless” processes that directly form circuit components. The direct deposition of metal lines and the direct doping of silicon eliminates all of the resist process steps, some process equipment and the associated organic chemical operations. If we expend 100 mJ/cm. to expose an organic resi

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