找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Semiconductor Devices and Integrated Electronics; A. G. Milnes Book 1980 A. G. Milnes 1980 communication.energy.information.modeling.natur

[复制链接]
楼主: Pierce
发表于 2025-3-25 04:36:55 | 显示全部楼层
发表于 2025-3-25 07:30:53 | 显示全部楼层
发表于 2025-3-25 14:30:23 | 显示全部楼层
发表于 2025-3-25 16:56:40 | 显示全部楼层
Bipolar Junction Transistors,ich is reverse-biased so that the electric field in the depletion region aids the collection, as in Fig. 4.1(b). If the base region is graded in doping, as in Fig. 4.1(c), the transport of electrons across the base is aided by the electric field there and the frequency response of the transistor is increased.
发表于 2025-3-25 23:05:36 | 显示全部楼层
发表于 2025-3-26 01:31:54 | 显示全部楼层
发表于 2025-3-26 05:27:56 | 显示全部楼层
发表于 2025-3-26 11:44:57 | 显示全部楼层
Insulated Gate Field-Effect-Transistors: MOSFETs, IGFETs and Related Devices,nel depletion type structure [see Fig. 7.1(b)] the channel is already present (as a result of a shallow .-type diffusion or implant or as a result of interface conditions). This channel can be partially depleted by a negative gate voltage or enhanced by a positive gate voltage.
发表于 2025-3-26 14:38:28 | 显示全部楼层
Solar Cells,ent is five to ten times greater than for generation of power from coal, oil, or nuclear electric power stations. However, there is reasonable hope that in the next few decades photovoltaic costs will be reduced to a level where we will see a significant fraction, say 10–20%, of electric power needs supplied in this way.
发表于 2025-3-26 17:09:10 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-19 01:53
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表