Titlebook: Semiconductor Devices and Integrated Electronics; A. G. Milnes Book 1980 A. G. Milnes 1980 communication.energy.information.modeling.natur

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书目名称Semiconductor Devices and Integrated Electronics影响因子(影响力)




书目名称Semiconductor Devices and Integrated Electronics影响因子(影响力)学科排名




书目名称Semiconductor Devices and Integrated Electronics网络公开度




书目名称Semiconductor Devices and Integrated Electronics网络公开度学科排名




书目名称Semiconductor Devices and Integrated Electronics被引频次




书目名称Semiconductor Devices and Integrated Electronics被引频次学科排名




书目名称Semiconductor Devices and Integrated Electronics年度引用




书目名称Semiconductor Devices and Integrated Electronics年度引用学科排名




书目名称Semiconductor Devices and Integrated Electronics读者反馈




书目名称Semiconductor Devices and Integrated Electronics读者反馈学科排名

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Avalanche-Diode Microwave Oscillators, Amplifiers, and Gunn Devices,d, 2.60–3.95 GHz; . band, 4.90–7.05 GHz; . band, 8.20–12.40 GHz; . band, 15.3–18.0 GHz, and . band, 18.0–26.50 GHz. At . band the wavelength is about 3 cm and above 30 GHz the wavelengths enter the millimeter range.

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Light-Emitting Diodes and Injection Lasers,n the infrared region and not visible to the human eye. The bandgap of GaAs.P., however, is about 1.9 eV which corresponds to emission at 650 nm in the red region of the spectrum. Hence GaAsP is a widely used material for light-emitting diodes.

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Integrated Circuit Fundamentals,Integrated circuit technology has made possible instruments and applications that were inconceivable on the grounds of cost, size and reliability a decade ago.

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Semiconductor Junctions and Diodes,he stage but there is no space to consider in detail elementary concepts of semiconductors or circuits. Some familiarity is therefore assumed with analog and digital circuits, amplifiers, oscillators, modulators and gates; and with semiconductor concepts of bandgaps, mobilities, density of states, F

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Metal-Semiconductor Schottky-Barrier Diodes,g. 2.1 (a), determines the barrier height (φ. − χ.) for the simple model shown on Fig. 2.1(b). This barrier forms by equalization of the Fermi levels across the junction due to the movement of electrons from the semiconductor to the metal interface. The barrier in the semiconductor itself is .. = φ.