找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Secondary Ion Mass Spectrometry SIMS IV; Proceedings of the F A. Benninghoven,J. Okano,H. W. Werner Conference proceedings 1984 Springer-Ve

[复制链接]
查看: 7712|回复: 56
发表于 2025-3-21 17:51:51 | 显示全部楼层 |阅读模式
书目名称Secondary Ion Mass Spectrometry SIMS IV
副标题Proceedings of the F
编辑A. Benninghoven,J. Okano,H. W. Werner
视频videohttp://file.papertrans.cn/864/863195/863195.mp4
丛书名称Springer Series in Chemical Physics
图书封面Titlebook: Secondary Ion Mass Spectrometry SIMS IV; Proceedings of the F A. Benninghoven,J. Okano,H. W. Werner Conference proceedings 1984 Springer-Ve
描述This volume contains full proceedings of the Fourth International Conference on Secondary Ion Mass Spectrometry (SIMS-IV), held in the Minoo-Kanko Hotel, Osaka, Japan, from November 13th to 19th, 1983. Coordinated by a local or­ ganizing committee under the auspices of the international organizing com­ mittee, it followed earlier conferences held in MUnster (1977), Stanford (1979), and Budapest (1981). The conference was attended by about 250 participants from 18 countries, and 130 papers including 24 invited ones were presented. Reflecting the rap­ idly expanding activities in the SIMS field, informative papers were pre­ sented containing up-to-date information on SIMS and various related fields. The proceedings focussed upon six main issues: (1) Fundamentals of sput­ tering and secondary ion formation. (2) Recent progress in instrumentation, including submicron SIMS and image processing. (3) SIMS combined with other surface analysis techniques. (4) Outstanding SIMS-related analytical methods such as laser-microprobe SIMS, sputtered neutral mass spectrometry, mass spectrometry of sputtered neutrals by multi-photon resonance ionization, and accelerator-based SIMS. (5) Organic SIMS
出版日期Conference proceedings 1984
关键词Atom; Diffusion; Sorption; catalyst; crystal; electron spectroscopy; hydrogen; isotope; mass spectrometry; me
版次1
doihttps://doi.org/10.1007/978-3-642-82256-8
isbn_softcover978-3-642-82258-2
isbn_ebook978-3-642-82256-8Series ISSN 0172-6218 Series E-ISSN 2364-9003
issn_series 0172-6218
copyrightSpringer-Verlag Berlin Heidelberg 1984
The information of publication is updating

书目名称Secondary Ion Mass Spectrometry SIMS IV影响因子(影响力)




书目名称Secondary Ion Mass Spectrometry SIMS IV影响因子(影响力)学科排名




书目名称Secondary Ion Mass Spectrometry SIMS IV网络公开度




书目名称Secondary Ion Mass Spectrometry SIMS IV网络公开度学科排名




书目名称Secondary Ion Mass Spectrometry SIMS IV被引频次




书目名称Secondary Ion Mass Spectrometry SIMS IV被引频次学科排名




书目名称Secondary Ion Mass Spectrometry SIMS IV年度引用




书目名称Secondary Ion Mass Spectrometry SIMS IV年度引用学科排名




书目名称Secondary Ion Mass Spectrometry SIMS IV读者反馈




书目名称Secondary Ion Mass Spectrometry SIMS IV读者反馈学科排名




单选投票, 共有 0 人参与投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 21:59:42 | 显示全部楼层
Simulation of Ion Sputtering Process on the Binary Alloyuent atoms to the surface and the ion-enhanced diffusion [1–7]. The simulation of the sputtering including the segregation and the ion enhanced diffusion with computer has advantage in order to understand the sputtering mechanism of the alloys.
发表于 2025-3-22 02:13:09 | 显示全部楼层
发表于 2025-3-22 06:00:13 | 显示全部楼层
Surface Structure of Oxidized Metals Bombarded by Incident Ionsnexplicably on the precision of ion mass spectrometry. However, the mechanism of cone growth is not well revealed. To clarify this, the experiment using 42%Ni-Fe alloy has been carried out in the ion mass analyzer.
发表于 2025-3-22 08:46:14 | 显示全部楼层
发表于 2025-3-22 12:53:10 | 显示全部楼层
发表于 2025-3-22 18:30:24 | 显示全部楼层
发表于 2025-3-22 21:47:18 | 显示全部楼层
Sputtering and Secondary Ion Yields of Ti-Al Alloys Subjected to Oxygen Ion BombardmentA principal approach to the fundamental understanding of SIMS process requires the accumulation of reliable data. Recently, we determined the yields of sputtering and secondary ion emission of pure metals under oxygen ion bombardment, and found some factors governing fundamental phenomena of SIMS[1].
发表于 2025-3-23 02:20:12 | 显示全部楼层
Influence of Alkali Metals on the Negative Secondary Ion Emission from SiliconThe utility of ion implantation to investigate the influence of reactive ions on the secondary ion emission has been demonstrated by COLLIGON and KIRIAKIDES [1] in the case of copper matrix material.
发表于 2025-3-23 07:27:55 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 吾爱论文网 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
QQ|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-7-30 06:10
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表