Titlebook: Scanning Probe Microscopy; Electrical and Elect Sergei Kalinin,Alexei Gruverman Book 2007 Springer-Verlag New York 2007 AFM.KLTcatalog.Micr

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Frequency-Dependent Transport Imaging by Scanning Probe Microscopye characterization and failure analysis. The rapid development of nanomaterials and nanoscale devices necessitates extending our fundamental understanding of transport phenomena to the nanoscale as well. The ability to conduct nanoscale impedance measurements provides a promising route to extend our

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Principles of Near-Field Microwave Microscopyshorter than the free-space wavelength of the radiation. Here we review the basic concepts of near-field interactions between a source and sample, present an historical introduction to work in the field, and discuss a novel quantitative modeling approach to interpreting near-field microwave images.

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Emmenagogue

Scanning Probe Microscopy on Low-Dimensional Electron Systems in III–V Semiconductorsas been gained by macroscopic measurements such as transport, magnetization, or optics [.], [.]. However, theoretical descriptions of the observed phenomena mostly rely on a distinct local arrangement of the corresponding electron phases [.]–[.]. For example, it is believed that the quantum Hall pla

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Spin-Polarized Scanning Tunneling Microscopy. In addition, Sp-STM allows us to map the spin polarization. Thus, information on the magnetic configuration of the sample surface can be gathered. Three imaging modes are currently being used: the constant-current mode, the spectroscopic mode, and the differential magnetic mode. The principles of

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