Titlebook: Scanning Probe Microscopy; Electrical and Elect Sergei Kalinin,Alexei Gruverman Book 2007 Springer-Verlag New York 2007 AFM.KLTcatalog.Micr

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书目名称Scanning Probe Microscopy影响因子(影响力)




书目名称Scanning Probe Microscopy影响因子(影响力)学科排名




书目名称Scanning Probe Microscopy网络公开度




书目名称Scanning Probe Microscopy网络公开度学科排名




书目名称Scanning Probe Microscopy被引频次




书目名称Scanning Probe Microscopy被引频次学科排名




书目名称Scanning Probe Microscopy年度引用




书目名称Scanning Probe Microscopy年度引用学科排名




书目名称Scanning Probe Microscopy读者反馈




书目名称Scanning Probe Microscopy读者反馈学科排名

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Scanning Probe Microscopy on Low-Dimensional Electron Systems in III–V Semiconductorsed the effort to observe the local arrangement of the electrons in real space by scanning probe techniques. In this chapter the current state of the art of the different scanning probe methods as applied to low-dimensional III-V semiconductors is reviewed and the specific advantages and drawbacks are discussed.

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Review of Ferroelectric Domain Imaging by Piezoresponse Force Microscopyf polarization reversal at the nanoscale, domain dynamics, degradation effects, and size-dependent phenomena in ferroelectrics are reviewed in detail. Examples of using PFM for the characterization of various polar materials such as ferroelectric films, piezoelectric semiconductors, and ferroelectric relaxors are given.

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Electromagnetic Singularities and Resonances in Near-Field Optical Probesering, fluorescence, etc.), the detection of the light is achieved in the far-field regime where the . acts as a mediator between the optical near-field and the detector. Figure 1 is a schematic illustration of the SNOM principle.

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Introduction devices at the micro-, nano-, and atomic scale levels. While structural information can be obtained by such established techniques as scanning and transmission electron microscopy, high-resolution examination of local electronic structure, electric potential and chemical functionality is a much mor

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Scanning Tunneling Potentiometry: The Power of STM applied to Electrical Transportand electronic structure of materials on an atomic scale and essentially ushered in the modern field of nanoscience. The goal of scanning tunneling potentiometry (STP) is to adapt the scanning tunneling probe to measure electrical transport on the same length scale. The approach is to establish a cu

Uncultured

Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopyvation of the dopants in two dimensions. For Si technology, Duane had already determined in 1996 that, in the 0.25-μm CMOS technology, a 10-nm decrease in the channel length was responsible for a more than 10% increase in the gate-to-drain overlap capacitance [.]. In the 65-nm devices processed toda

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Scanning Capacitance Microscopy for Electrical Characterization of Semiconductors and Dielectricso measure the capacitance between a conducting tip and sample. When applied to a semiconductor sample, an ac voltage at around 10 kHz is used to induce a depletion region within the semiconductor. The resulting differential capacitance is measured with a lock-in amplifier. The SCM contrast is propor