Titlebook: Resonant Tunneling in Semiconductors; Physics and Applicat L. L. Chang,E. E. Mendez,C. Tejedor Book 1991 Plenum Press, New York 1991 scatte

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D. G. Austing,P. C. Klipstein,A. W. Higgs,G. W. Smith,J. S. Roberts,G. Hill19 pandemic.Uses an accessible language for academics, stude.This book discusses the emerging threats to European stability in different borderland regions, from the Greater Middle East to the Eastern Mediterranean, the Balkans and the Black Sea. It highlights the specific geopolitical risks that co

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0258-1221 ", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit­ nessed in quantum structures in general. Resonant tunneling shares also the multi­ disc

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Phonon Emission Processes in (GaIn)As/(AlIn)As Double Barrier Diodese conductivity of the sample reveal the presence of both elastic and inelastic intersubband scattering in the quantum well of the structure and “GaAs-like” LO phonon emission assisted intersubband scattering is identified.

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MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures peak-to-valley current ratios (up to 5.9) reported to date for GaAs-based structures. Through comparative experiments with different well materials we are able to explain the asymmetry which is commonly observed between forward and reverse bias in the I-V characteristics.

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Resonant Interband Tunnelingbserved. The calculated current-voltage characteristics show different behavior according to having GaSb or InAs as the quantum well. Also, in some cases, they are very asymmetric with respect to change of bias polarization, in agreement with experimental results.