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Titlebook: Resonant Tunneling in Semiconductors; Physics and Applicat L. L. Chang,E. E. Mendez,C. Tejedor Book 1991 Plenum Press, New York 1991 scatte

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书目名称Resonant Tunneling in Semiconductors
副标题Physics and Applicat
编辑L. L. Chang,E. E. Mendez,C. Tejedor
视频video
丛书名称NATO Science Series B:
图书封面Titlebook: Resonant Tunneling in Semiconductors; Physics and Applicat L. L. Chang,E. E. Mendez,C. Tejedor Book 1991 Plenum Press, New York 1991 scatte
描述This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit­ nessed in quantum structures in general. Resonant tunneling shares also the multi­ disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli­ cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categor
出版日期Book 1991
关键词scattering; semiconductor; semiconductors; stability; complexity
版次1
doihttps://doi.org/10.1007/978-1-4615-3846-2
isbn_softcover978-1-4613-6716-1
isbn_ebook978-1-4615-3846-2Series ISSN 0258-1221
issn_series 0258-1221
copyrightPlenum Press, New York 1991
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978-1-4613-6716-1Plenum Press, New York 1991
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Resonant Tunneling in Semiconductors978-1-4615-3846-2Series ISSN 0258-1221
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A Perspective of Resonant Tunnelingductor materials, proceeds to discuss the effects of band structure and electron dynamics, continues to describe systems of multiple barriers and low dimensional electrons, and ends with a summary of device applications. The emphasis is on major experimental observations, which serve as cornerstones of this field.
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Resonant Tunneling of Holes in Strained Layers—SiGe/Siort direction has been investigated. With the perpendicular field direction, tunneling of light and heavy holes can he clearly discriminated, while the parallel magnetic field gives complicated results. A hot hole tunneling transistor has been successfully fabricated using a resonant tunneling emitter.
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Resonant Tunneling of Holes in the Envelope-Function Approximationresented. The formalism is applied to lattice-matched GaAs-AlAs and lattice-mismatched Si-Si.Ge.. The effects of mixing between heavy-hole, light-hole and spin-orbit split-off states are seen in the transmission coefficient. The calculated resonant bias values in the current are compared with experimental results.
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Studies on Tunneling Characteristics on Asymmetric GaAs/AlAs Double-Barrier Structureser two opposite biases have systematically been studied. It is found that LO phonon-assisted tunneling in two opposite directions may possibly be controlled by the different dwell times of traversing electrons in the well as the structure is positively or negatively biased.
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