Titlebook: Research on the Radiation Effects and Compact Model of SiGe HBT; Yabin Sun Book 2018 Springer Nature Singapore Pte Ltd. 2018 SiGe HBT.Radi

多产鱼

Parameter Extraction of SiGe HBTs,The extracted results using the numerical optimization strongly depends on the initial value and the the selection of simulation tool. Direct analytical extraction method is generally based on the frequency response

无意

观察

Yabin SunNominated as an outstanding PhD dissertation by Tsinghua University, China.Proposes a new technique for detecting displacement damage in silicon-germanium (SiGe) heterojunction bipolar transistors (HB

RAGE

tariff

变化无常

Amnesty

Displacement Effects in SiGe HBT,ch has become an important issue in the study of radiation effects. In the past few years, as the traditional radiation source, neutrons have been always used to characterize the displacement damage effects in devices and circuit systems.

Infraction

烧瓶

修饰语

Benjamin Rix Brooks M.D.,Robert L. Hirsch Ph.D.,Patricia K. Coyle M.D.erseits wird die Selbstverständlichkeit von Werten und Normen — die Kultur -der Einheimischen plötzlich in Frage gestellt, ihre sozialen Produktionsfunktionen bedroht, Konkurrenz entsteht. Andererseits müssen die Zuwanderer neue Handlungsstrategien entwerfen, die es ihnen erlauben, sich in der Aufna