| 书目名称 | Research on the Radiation Effects and Compact Model of SiGe HBT |
| 编辑 | Yabin Sun |
| 视频video | http://file.papertrans.cn/829/828066/828066.mp4 |
| 概述 | Nominated as an outstanding PhD dissertation by Tsinghua University, China.Proposes a new technique for detecting displacement damage in silicon-germanium (SiGe) heterojunction bipolar transistors (HB |
| 丛书名称 | Springer Theses |
| 图书封面 |  |
| 描述 | This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.. |
| 出版日期 | Book 2018 |
| 关键词 | SiGe HBT; Radiation Effects; Heavy Ion Radiation; Compact Model; Parameter Extraction; silicon-germanium; |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-981-10-4612-4 |
| isbn_softcover | 978-981-13-5181-5 |
| isbn_ebook | 978-981-10-4612-4Series ISSN 2190-5053 Series E-ISSN 2190-5061 |
| issn_series | 2190-5053 |
| copyright | Springer Nature Singapore Pte Ltd. 2018 |
|Archiver|手机版|小黑屋|
派博传思国际
( 京公网安备110108008328)
GMT+8, 2025-11-12 12:14
发表于 2025-3-21 16:39:53
