Titlebook: Optical Properties of Narrow-Gap Low-Dimensional Structures; C. M. Sotomayor Torres,J. C. Portal,R. A. Stradlin Book 1987 Plenum Press, Ne

aerial

Quantum Wells and Superlattices of Diluted Magnetic Semiconductorsn the most thoroughly understood group of these materials, i.e., on II–VI compounds containing substitutional Mn. . Of those, Hg.Mn.Te and Hg.Mn.Se are narrow gap semiconductors, with the band structure analogous to that of Hg.Cd.Te, whereas Cd.Mn.Te and Zn.Mn.Se are examples II VI of wide-gap DMS.

landmark

Energy Relaxation Phenomena in GaAs/GaAlAs Structuresoscillations, the far infrared emission and photoluminescence spectra. A quite general behavior of the electron heating ∆T = T. − T. as a function of the input power per electron P. is found: .. The corresponding energy relaxation times in the range of nsec are independent of the electron temperatur

慢慢啃

misanthrope

Working-Memory

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Cyclotron Resonance of Inversion Electrons on InSbn various materials in recent years.. The most interesting feature on narrow-gap semiconductors like InSb or Hg.Cd.Te is the coupling of valence and conduction band which results from their small gap energy. As a consequence the conduction band is strongly nonparabolic, i.e., the apparent mass stron

DRILL

大猩猩

exercise

Strained Layer Superlattices of GaInAs-GaAses on a graded buffer layer matching this mean parameter. For the same reason, they constitute interesting buffer layers between two largely mismatched materials [3]. Moreover, the modifications of the properties of the grown semiconductors by the built-in strains they experience make them potential

CEDE