Titlebook: Optical Properties of Narrow-Gap Low-Dimensional Structures; C. M. Sotomayor Torres,J. C. Portal,R. A. Stradlin Book 1987 Plenum Press, Ne

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Water-Brash

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The Rate of Capture of Electrons into the Wells of a Superlatticewell-width. Modifications to this simple model are made which take account of the actual superlattice bandstructure and eigenfunctions, and non-resonant initial states. In contradistinction to other work only weak resonances are predicted, and it turns out that the simple model remains useful.

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0258-1221 , held from July 29th to August 1st, 1986, in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop was not limited to optical properties of narrow-gap semiconductor structures (Part III). Sessions on, for example, the growth methods and charac

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Crystal Qualities and Optical Properties of MBE Grown GaSb/AlGaSb Superlattices and Multi-Quantum-We. The lower and higher energy peaks were assigned to be due to heavy hole excitons and light hole excitons, respectively, based on a study of the polarization dependence of the guided emission. This assignment was confirmed by a biaxial strain measurement using an asymmetric X-ray diffraction.

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Energy Relaxation Phenomena in GaAs/GaAlAs Structuresission. However, the onset depends on electron concentration and is different for heterostructures and quantum wells. From intensity dependent cyclotron resonance transmission experiments Landau level lifetimes between 0.2 ns and 1 ns depending on the electron density are found in agreement with data from time-resolved photoluminescence.

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Book 1987m July 29th to August 1st, 1986, in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop was not limited to optical properties of narrow-gap semiconductor structures (Part III). Sessions on, for example, the growth methods and characterization

大洪水

Magnetic Field Effects on the Electronic States of Narrow-Gap Low-Dimensional Structureshe subbands and, when a magnetic field is present, a complicated Landau level pattern. This will be exemplified by results of calculations performed with the envelope-function method for InAs-GaSb and HgTe-CdTe heterostructures. Current problems in the interpretation of magneto-optical and Quantum Hall experiments are discussed.

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The MBE Growth of InSb-Based Heterojunctions and LDS1] to exhibit an order of magnitude higher electron mobilities than is observed in corresponding GaAs/GaAlAs devices whilst CdTe/InSb quantum-well structures are also attractive for use as infra-red sources and detectors. Studies of LDS based on the InAs/InSb and InAlSb/InSb material systems have also been reported [3,4].