Titlebook: New Developments in Semiconductor Physics; Proceedings of the T G. Ferenczi,F. Beleznay Conference proceedings 1988 Springer-Verlag Berlin

Obstreperous

Lucubrate

avarice

Lawrence C. Snyder,James W. Corbett,Peter Deák,Rongzhi Wu

可以任性

H. G. Grimmeiss,M. Kleverman,K. Bergman,L. Montelius

残忍

synovial-joint

Band-edge offsets in semiconductor heterojunctions,ion-metal-energy level alignment and experimental results of BEO‘s in binary and ternary III–V compounds a level order of valence-band edges in these compounds is proposed. The importance of a fixed reference level formed by transitions metals in the semiconductor is emphasized and recently reported

GREEN

Theory of the energy loss rate of hot electrons in 2D systems,

因无茶而冷淡

Formation of ribbon-like defects during low-temperature annealing of Czochralski-grown silicon,

forestry

Juvenile

The diffusion and electronic structure of hydrogen in silicon,