Titlebook: New Developments in Semiconductor Physics; Proceedings of the T G. Ferenczi,F. Beleznay Conference proceedings 1988 Springer-Verlag Berlin

Exacting

书目名称New Developments in Semiconductor Physics影响因子(影响力)




书目名称New Developments in Semiconductor Physics影响因子(影响力)学科排名




书目名称New Developments in Semiconductor Physics网络公开度




书目名称New Developments in Semiconductor Physics网络公开度学科排名




书目名称New Developments in Semiconductor Physics被引频次




书目名称New Developments in Semiconductor Physics被引频次学科排名




书目名称New Developments in Semiconductor Physics年度引用




书目名称New Developments in Semiconductor Physics年度引用学科排名




书目名称New Developments in Semiconductor Physics读者反馈




书目名称New Developments in Semiconductor Physics读者反馈学科排名

创新

刀锋

The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb taking their predominant character from higher conduction band minima. These states can be made to emerge into the forbidden gap by applying hydrostatic pressure. Judged by the measured pressure coefficients two sets of levels are closely tied to the L- and X-conduction band minima. At low temperat

披肩

傲慢物

Determination of the lateral defect distribution by SDLTS in GaAs,s approximation cannot be used without restrictions and investigation of the SDLTS signal as a function of generation parameters is necessary, as will be illustrated by measuring the EL2 distribution in GaAs Schottky barrier.

新陈代谢

facilitate

样式

Spectroscopic studies of point defects in silicon and germanium,ts from group III and V in the Periodic Table, special attention is given to defects with binding energies of the ground state much larger than those predicted by the effective mass theory (EMT) such as double donors (group VI) and double acceptors (group II) as well as transition metals. All these

malign

Interpretation of the electric field dependent thermal emission data of deep traps, the interpretation of the thermal emission probability measurements. It is concluded that the contribution of the capture process if properly taken into account proves the validity of the Poole-Frenkel model of the electric field dependence.

Narrative