Titlebook: Nanoscale Redox Reaction at Metal/Oxide Interface; A Case Study on Scho Takahiro Nagata Book 2020 National Institute for Materials Science,

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Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure,hard X-ray photoelectron spectroscopy under bias operation. We demonstrated resistance switching for nonvolatile memory applications using a polycrystalline HfO. film with a Cu top electrode, and revealed the diffusion of Cu into the HfO. layer during the filament formation process. Resistive switch

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Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide,tions. As summarized in Chap. ., the density of oxygen vacancies is important in terms of controlling the conductive filament formation and switching of a nanoionic-type ReRAM structure. In this chapter, as an example of the control of oxygen vacancies and switching properties of the ReRAM structure

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NIMS Monographshttp://image.papertrans.cn/n/image/660951.jpg

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General Summary,In this book, the research topics concerns the oxide thin-film materials for the electronics device applications, which were performed by author’s grouped at NIMS.

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Takahiro NagataDescribes the use of interface control to maximize the potential of materials in nanoscale phenomena.Introduces the combinatorial synthesis method for thin film growth used in the optimization of nume

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