| 书目名称 | Nanoscale Redox Reaction at Metal/Oxide Interface | | 副标题 | A Case Study on Scho | | 编辑 | Takahiro Nagata | | 视频video | | | 概述 | Describes the use of interface control to maximize the potential of materials in nanoscale phenomena.Introduces the combinatorial synthesis method for thin film growth used in the optimization of nume | | 丛书名称 | NIMS Monographs | | 图书封面 |  | | 描述 | .Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. .The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications..In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.. | | 出版日期 | Book 2020 | | 关键词 | Combinatorial Synthesis; Metal/oxide Interface; Plasma Surface Treatment; Resistive Random Access Memor | | 版次 | 1 | | doi | https://doi.org/10.1007/978-4-431-54850-8 | | isbn_softcover | 978-4-431-54849-2 | | isbn_ebook | 978-4-431-54850-8Series ISSN 2197-8891 Series E-ISSN 2197-9502 | | issn_series | 2197-8891 | | copyright | National Institute for Materials Science, Japan 2020 |
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发表于 2025-3-21 17:32:27
