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Titlebook: Nanometer CMOS ICs; From Basics to ASICs Harry J.M. Veendrick Textbook 20172nd edition Springer International Publishing AG 2017 CMOS Nanoe

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发表于 2025-3-21 16:39:18 | 显示全部楼层 |阅读模式
书目名称Nanometer CMOS ICs
副标题From Basics to ASICs
编辑Harry J.M. Veendrick
视频video
概述Provides semester-length textbook, with comprehensive coverage of nanometer CMOS integrated circuits.Covers all associated disciplines of nanometer CMOS ICs, including physics, design, process, yield,
图书封面Titlebook: Nanometer CMOS ICs; From Basics to ASICs Harry J.M. Veendrick Textbook 20172nd edition Springer International Publishing AG 2017 CMOS Nanoe
描述This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits.  It includes aspects of scaling to even beyond 12nm CMOS technologies and designs.  It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application.  Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks.  The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.
出版日期Textbook 20172nd edition
关键词CMOS Nanoelectronics; CMOS VLSI Design; CMOS VLSI Design textbook; Nanometer CMOS Integrated Circuits; C
版次2
doihttps://doi.org/10.1007/978-3-319-47597-4
isbn_softcover978-3-319-83777-2
isbn_ebook978-3-319-47597-4
copyrightSpringer International Publishing AG 2017
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Basic Principles,he design and manufacture of modern . circuits. This chapter describes the operation and characteristics of MOS devices. The material requirements for their realisation are discussed and equations that predict their behaviour are derived.
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Geometrical-, Physical- and Field-Scaling Impact on MOS Transistor Behaviour, and geometrical effects which significantly degrade the behaviour of MOS transistors. The results are therefore considerably more optimistic than the actual performance observed in MOS circuits. The deviation becomes more significant as MOS transistor sizes decrease in VLSI circuits.
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CMOS Circuits,little power. Examples include chips for calculators, watches and remote controls. CMOS offers both n-type and p-type MOS transistors. Initially, this meant that CMOS circuits were more costly than their nMOS equivalents.
发表于 2025-3-22 16:34:04 | 显示全部楼层
nometer CMOS ICs, including physics, design, process, yield,This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits.  It includes aspects of scaling to even beyond 12nm CMOS technologies and designs.  It clearly describes the fundame
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Harry J.M. VeendrickProvides semester-length textbook, with comprehensive coverage of nanometer CMOS integrated circuits.Covers all associated disciplines of nanometer CMOS ICs, including physics, design, process, yield,
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https://doi.org/10.1007/978-3-319-47597-4CMOS Nanoelectronics; CMOS VLSI Design; CMOS VLSI Design textbook; Nanometer CMOS Integrated Circuits; C
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