Titlebook: Metallization and Metal-Semiconductor Interfaces; Inder P. Batra Book 1989 Plenum Press, New York 1989 Doping.Metall.Semiconductor.Tunnel

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Deep Levels and Band Bending at Metal-Semiconductor Interfaces properties of different metal overlayers and the physical mechanisms responsible for this Fermi level “pinning”. Hampering efforts to identify the nature of charge transfer at these electronic junctions has been the narrow ranges of reported Fermi stabilization energies themselves, which permit a n

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Metal-GaAs(110) Interfaces Formed at Low Temperature: From Adsorbate- to Metal-Induced Gap Statestroversial) .. The origin and nature of the interface states which pin the Fermi level (E.) at metal-semiconductor interfaces remain uncertain. The difficulty in resolving this issue stems from the diversity of metal-semiconductor interfaces and from the complexity of their chemistry, morphology and

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Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Ybic layers when they are grown at room temperature ( RT ) or even at lower temperatures, such as around 80 °K (conventionally called LNT, Liquid Nitrogen Temperature ). This fact resulted intriguing in consideration of the rather high energy needed to break a bond in many semiconductor substrates. Fo

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Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfacesis because these silicides grow pseudomorphically on Si, and form atomically abrupt interfaces with a low defect density. Because they are pseudomorphic, they offer the opportunity to understand the atomic geometry of the interface in complete detail. This, in turn, permits detailed theoretical stud

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Calculated Electronic Structures and Schottky Barrier Heights of (111) NiSi2/Si A- and B-Type Interfout 0.1 eV using density functional theory in the local approximation (LDA). We have investigated whether, for well-characterised metal-semiconductor interfaces, the Schottky-barrier heights can be calculated with similar accuracy. In this paper we report on our findings.

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