Titlebook: Metallization and Metal-Semiconductor Interfaces; Inder P. Batra Book 1989 Plenum Press, New York 1989 Doping.Metall.Semiconductor.Tunnel

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0258-1221 the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as­ sessment

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Servile

Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodesn,. interface dislocations,. or a combination of these effects. Deviations from the Schottky model2 are then understandable on the basis of trapped interface charge which maintains a dipole at the interface between the metal and the semiconductor..

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Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfacesy of the electronic properties of these interfaces at a level not possible for other metal-semiconductor systems. These Schottky-barrier systems are on a par with, or perhaps better than, molecular-beam-epitaxy-grown semiconductor heterostructures in their degree of perfection.

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e cell. In the last few years, direct RNA nanopore sequencing (dRNA-seq) has emerged as a promising technology that can provide single-molecule resolution maps of RNA modifications in their native RNA context. While native RNA can be successfully sequenced using this technology, the detection of RNA

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jagged

e cell. In the last few years, direct RNA nanopore sequencing (dRNA-seq) has emerged as a promising technology that can provide single-molecule resolution maps of RNA modifications in their native RNA context. While native RNA can be successfully sequenced using this technology, the detection of RNA