Titlebook: Materials Fundamentals of Gate Dielectrics; Alexander A. Demkov,Alexandra Navrotsky Book 2005 Springer Science+Business Media B.V. 2005 Hi

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Dielectric Properties of Simple and Complex Oxides from First Principles,ulators. Drawing on previous theoretical work, we discuss the sources and magnitudes of errors in these calculations. For perovskites and related oxide materials, we compare theoretical results with available experimental data on dielectric response and on related properties such as optical absorpti

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Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides,re calculated by various means and compared to their experimental determinations. The bonding at abrupt Si-oxide interfaces are considered in order to obtain an insulating interface. The energy levels of point defects and of interstitial hydrogen are considered as candidates for the substantial fixed charge present in these oxides.

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