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Titlebook: Low Dielectric Constant Materials for IC Applications; Paul S. Ho,Jihperng Jim Leu,Wei William Lee Book 2003 Springer-Verlag Berlin Heidel

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书目名称Low Dielectric Constant Materials for IC Applications
编辑Paul S. Ho,Jihperng Jim Leu,Wei William Lee
视频videohttp://file.papertrans.cn/589/588762/588762.mp4
概述First one in the emerging field of low dielectric constant materials.There is worldwide a big need for such a book.Includes supplementary material:
丛书名称Springer Series in Advanced Microelectronics
图书封面Titlebook: Low Dielectric Constant Materials for IC Applications;  Paul S. Ho,Jihperng Jim Leu,Wei William Lee Book 2003 Springer-Verlag Berlin Heidel
描述Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.
出版日期Book 2003
关键词Dielectric Materials; Integrated circuit manufacture; Interconnects; Low dielectric constant; Permittivi
版次1
doihttps://doi.org/10.1007/978-3-642-55908-2
isbn_softcover978-3-642-63221-1
isbn_ebook978-3-642-55908-2Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer-Verlag Berlin Heidelberg 2003
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Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-, Materials,as the resistance of the wiring metals. For this reason, a great deal of effort has been spent in developing low dielectric constant (low-κ) materials that can reduce the parasitic capacitance of interconnects in ULSI circuits [.].
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Integration of SiLK Semiconductor Dielectric,ning, and clean and metallization) required to produce an interconnect structure are discussed in detail. Special attention is given to the lithographic bene- fits that can be obtained when using SiLK semiconductor dielectric in the different schemes. Finally, a brief cost-of-ownership discussion is provided.
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Book 2003tant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about m
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1437-0387 terial: Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging
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Overview on Low Dielectric Constant Materials for IC Applications,actors for ultra-large-scale integration of integrated circuits. Materials with low dielectric constant are being developed to replace silicon dioxide as interlevel dielectrics. This chapter provides an overview on the basic issues of low-k dielectrics for interconnect applications and serves as a f
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Structure and Property Characterization of Low-, Dielectric Porous Thin Films Determined by X-Ray Rn scattering has been developed. The average pore size, pore connectivity, film thickness, wall or matrix density, coefficient of thermal expansion, and moisture uptake of nanoporous thin films with nonhomogeneous solid matrices can be measured. The measurements can be performed directly on films up
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