Titlebook: Low Dielectric Constant Materials for IC Applications; Paul S. Ho,Jihperng Jim Leu,Wei William Lee Book 2003 Springer-Verlag Berlin Heidel

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Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-, Materials,king design rule of ULSI circuits has recently increased the interconnection delay caused by parasitic capacitance so much that this delay has become more of a problem than the gate delay [.]. To reduce this delay, we must reduce the parasitic capacitance of the intermetal dielectrics (IMD) as well

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Metal/Polymer Interfacial Interactions,acial thermal stability, and (in the case of metallization via MOCVD) organometallic reactivity with the surface. An understanding of these issues in turn rests on a characterization of the chemical bonding interactions at the metal/ polymer interface. This chapter discusses the results of surface-s

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Plasma Etching of Low Dielectric Constant Materials,ents a rich spectrum of challenges. This is due to the multitude of low dielectric constant materials that are being considered for these applications, and their widely varying properties. We review generic patterning issues for inorganic, organic, and mixed organic/inorganic low dielectric constant

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E. K. Lin,H. Lee,B. J. Bauer,H. Wang,J. T. Wetzel,W. WuLand Law debate.Includes a special chapter on the current la.This thesis provides a new approach to the Ethiopian Land Law debate. The basic argument made in this thesis is that even if the Ethiopian Constitution provides and guarantees common ownership of land (together with the state) to the peopl