Titlebook: Inside NAND Flash Memories; Rino Micheloni,Luca Crippa,Alessia Marelli Book 2010 Springer Science+Business Media B.V. 2010 Electronic Devi

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一致性

Redundancy,Redundancy is part of the NAND circuits which take care of its reliability. In addition to redundancy, modern NAND Flash use error correction codes to improve device reliability.

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XLC storage,The obvious advantage of designing NAND devices capable of storing .-bit/cell (where . is currently 2, 3, and 4) is the resulting reduction in area occupation of the matrix. However, the benefits of 3-bit/cell (or 8-Level-Cell, 8LC) and 4-bit/cell (or 16-Level-Cell, 16LC) technologies don’t come for free.

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Low power 3D-integrated SSD,With highly scaled 40 or 30 nm technologies, the memory capacity increases to as much as 32 Gbit as shown in Fig. 18.1. By using gigabit-capacity NAND flash memories, SSD, Solid-State Drive that uses NAND as a mass storage of personal computers and enterprise servers is expected as a next killer application of NAND Flash memories.

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