找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Inside NAND Flash Memories; Rino Micheloni,Luca Crippa,Alessia Marelli Book 2010 Springer Science+Business Media B.V. 2010 Electronic Devi

[复制链接]
查看: 47424|回复: 65
发表于 2025-3-21 17:16:50 | 显示全部楼层 |阅读模式
书目名称Inside NAND Flash Memories
编辑Rino Micheloni,Luca Crippa,Alessia Marelli
视频video
概述Flash NAND design.NAND – SSD co-development.Radiation effects on Flash memories.Charge trap technology overview.Includes supplementary material:
图书封面Titlebook: Inside NAND Flash Memories;  Rino Micheloni,Luca Crippa,Alessia Marelli Book 2010 Springer Science+Business Media B.V. 2010 Electronic Devi
描述Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media.To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera…), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console.The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses.Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits
出版日期Book 2010
关键词Electronic Devices; Flash Memories; NAND Memories; Solid State Circuits; integrated circuit; single-elect
版次1
doihttps://doi.org/10.1007/978-90-481-9431-5
isbn_softcover978-94-007-9834-2
isbn_ebook978-90-481-9431-5
copyrightSpringer Science+Business Media B.V. 2010
The information of publication is updating

书目名称Inside NAND Flash Memories影响因子(影响力)




书目名称Inside NAND Flash Memories影响因子(影响力)学科排名




书目名称Inside NAND Flash Memories网络公开度




书目名称Inside NAND Flash Memories网络公开度学科排名




书目名称Inside NAND Flash Memories被引频次




书目名称Inside NAND Flash Memories被引频次学科排名




书目名称Inside NAND Flash Memories年度引用




书目名称Inside NAND Flash Memories年度引用学科排名




书目名称Inside NAND Flash Memories读者反馈




书目名称Inside NAND Flash Memories读者反馈学科排名




单选投票, 共有 0 人参与投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 20:39:37 | 显示全部楼层
发表于 2025-3-22 03:27:20 | 显示全部楼层
发表于 2025-3-22 07:29:42 | 显示全部楼层
Christoph Friederiched Oslo Børs i sentrum,” created by Karl Høgberg in 1950, captures a vibrant scene depicting trade and commerce in Oslo. At the heart of the painting, amidst the bustling activities, is a young boy carrying a parrot, serving as a singular representation of an exilic body within the city hall. The pa
发表于 2025-3-22 09:59:11 | 显示全部楼层
C. Zambelli,A. Chimenton,P. Olivo unsatisfied stakeholders, neglected citizen groups, or completely ignored voices. What does it mean to find, listen, and respond to those concerned by the alteration of built environments? Here, in this paper, citizen participation, its ideological and political intentions, as well as its formal in
发表于 2025-3-22 14:02:43 | 显示全部楼层
Alessandro Grossiescape their predicament, the women, in search of safety and security, escape to facilities designed to shelter and protect them. Unfortunately, there are an increasing number of women’s shelters worldwide that are crowded, involve communal living, offer little or no privacy, and include restriction
发表于 2025-3-22 21:05:16 | 显示全部楼层
发表于 2025-3-23 00:26:56 | 显示全部楼层
发表于 2025-3-23 04:53:21 | 显示全部楼层
发表于 2025-3-23 09:26:42 | 显示全部楼层
Program and erase of NAND memory arrays,rt memory cell for this purpose in NAND Flash is the 1T floating gate memory cell, which is based on a MOSFET. In contrast to the 1T1C DRAM cell, which consists of an access transistor and a separate capacitance as charge storage node, the 1T floating gate cell is a MOSFET whose gate dielectric is s
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-11 14:55
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表