找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Hot-Carrier Reliability of MOS VLSI Circuits; Yusuf Leblebici,Sung-Mo (Steve) Kang Book 1993 Springer Science+Business Media New York 1993

[复制链接]
楼主: Maudlin
发表于 2025-3-23 13:21:29 | 显示全部楼层
Yusuf Leblebici,Sung-Mo (Steve) Kangsted various caregiving-related negative experiences might be related to older spousal caregivers’ mental health status, the components of psychological well-being (PSW) among older spousal caregivers have not been fully explored. This study examined the association between spousal caregiver status
发表于 2025-3-23 17:13:56 | 显示全部楼层
发表于 2025-3-23 21:33:44 | 显示全部楼层
发表于 2025-3-24 01:56:14 | 显示全部楼层
发表于 2025-3-24 05:02:27 | 显示全部楼层
发表于 2025-3-24 07:02:52 | 显示全部楼层
Yusuf Leblebici,Sung-Mo (Steve) Kangf elder abuse, which creates new challenges in the form of the indirect and direct victimization of children in the home. However, research on the relationship between children’s witnessing of elder abuse and their victimization experiences is limited. This study examines the physical and mental hea
发表于 2025-3-24 13:39:47 | 显示全部楼层
Yusuf Leblebici,Sung-Mo (Steve) Kangf elder abuse, which creates new challenges in the form of the indirect and direct victimization of children in the home. However, research on the relationship between children’s witnessing of elder abuse and their victimization experiences is limited. This study examines the physical and mental hea
发表于 2025-3-24 18:11:40 | 显示全部楼层
ers in debugging issues related to program correctness. The motivation is twofold. First, researchers widely use computation graphs to analyze dynamic program behavior. Second, most past work focused on visualizing performance bottlenecks rather than correctness issues. This paper’s contributions ar
发表于 2025-3-24 21:53:22 | 显示全部楼层
Oxide Degradation Mechanisms in MOS Transistors,ation of the oxide damage, the dependence of the degradation mechanisms upon various operating conditions and temperature, and the effects of the oxide damage upon device characteristics, will also be examined. Most of the following discussion is focussed on nMOS transistors, for which the hot-carri
发表于 2025-3-25 00:27:28 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-13 02:36
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表