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Titlebook: Hot-Carrier Reliability of MOS VLSI Circuits; Yusuf Leblebici,Sung-Mo (Steve) Kang Book 1993 Springer Science+Business Media New York 1993

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书目名称Hot-Carrier Reliability of MOS VLSI Circuits
编辑Yusuf Leblebici,Sung-Mo (Steve) Kang
视频video
丛书名称The Springer International Series in Engineering and Computer Science
图书封面Titlebook: Hot-Carrier Reliability of MOS VLSI Circuits;  Yusuf Leblebici,Sung-Mo (Steve) Kang Book 1993 Springer Science+Business Media New York 1993
描述As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada­ tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down­ ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucia
出版日期Book 1993
关键词Leistungsfeldeffekttransistor; MOSFET; VLSI; circuit; diagnosis; field-effect transistor; metal oxide semi
版次1
doihttps://doi.org/10.1007/978-1-4615-3250-7
isbn_softcover978-1-4613-6429-0
isbn_ebook978-1-4615-3250-7Series ISSN 0893-3405
issn_series 0893-3405
copyrightSpringer Science+Business Media New York 1993
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Oxide Degradation Mechanisms in MOS Transistors,he drain. The “damage” is in the form of localized oxide charge trapping and/or interface trap generation, which gradually builds up and permanently changes the oxide-interface charge distribution [1],[2]. In this chapter, the hot-carrier injection mechanisms leading to oxide damage in MOSFET device
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Modeling of Degradation Mechanisms,ion models developed for estimating the hot-carrier induced oxide degradation will be presented. The physical degradation models include all of the significant mechanisms, i.e., electron and hole trapping, interface trap generation by electron injection and interface trap generation by hole injectio
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Fast Timing Simulation for Circuit Reliability,VLSI chips increases with shrinking design rules. The development and use of . reliability simulation tools are therefore crucial for early assessment and improvement of circuit lifetime. Various approaches for modeling and estimating the hot-carrier related degradation of MOS transistors, based on
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Circuit Design for Reliability,s chapters. The development and use of accurate reliability simulation tools were recognized as crucial measures for early assessment and improvement of circuit reliability. Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined
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When blockchain technology and AI are coupled, fraud, identity theft, and data breaches are reduced, while financial transactions are seen as more trustworthy and legal. This abstract examines the potential synergies between blockchain technology and AI, as well as the uses, benefits, and combined
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