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Titlebook: Hot Carrier Degradation in Semiconductor Devices; Tibor Grasser Book 2015 Springer International Publishing Switzerland 2015 Degradation o

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发表于 2025-3-21 19:37:17 | 显示全部楼层 |阅读模式
书目名称Hot Carrier Degradation in Semiconductor Devices
编辑Tibor Grasser
视频video
概述Describes the intricacies of hot carrier degradation in modern semiconductor technologies.Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier trans
图书封面Titlebook: Hot Carrier Degradation in Semiconductor Devices;  Tibor Grasser Book 2015 Springer International Publishing Switzerland 2015 Degradation o
描述.This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.  .
出版日期Book 2015
关键词Degradation of Semiconductor Device Performance; Hot Carrier Degradation; Reliability Physics and Engi
版次1
doihttps://doi.org/10.1007/978-3-319-08994-2
isbn_softcover978-3-319-35912-0
isbn_ebook978-3-319-08994-2
copyrightSpringer International Publishing Switzerland 2015
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发表于 2025-3-21 22:54:03 | 显示全部楼层
From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradationus possible isotope effects provide context for a discussion of some qualitative aspects of the physics. Typical industry DC hot carrier stress models and their application to AC circuit models are described and motivated in that context.
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https://doi.org/10.1007/978-3-319-08994-2Degradation of Semiconductor Device Performance; Hot Carrier Degradation; Reliability Physics and Engi
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Jacopo Franco,Ben Kaczercal examples and guidelines, it will be of great interest to students and academics of supply chain management and procurement, as well as service supply chain managers looking for advanced strategies..978-3-031-68246-9978-3-031-68244-5
发表于 2025-3-23 00:01:29 | 显示全部楼层
Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degrs now cold-carrier (CC) damage results in a multiple-particle (MP) degradation process thermally activated under multivibration excitation of the passivated dangling bonds at the interface. Next, we finally develop a complete modeling for NMOS and PMOS devices that is transferred from DC acceleratin
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Physics-Based Modeling of Hot-Carrier Degradationkage and the strong localization of hot-carrier damage. Our model is linked and compared with other approaches to HCD simulations. Special attention is paid to the importance of the particular model ingredients, such as competing mechanisms of the Si–H bond dissociation, electron–electron scattering
发表于 2025-3-23 06:30:26 | 显示全部楼层
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