Titlebook: Hot Carrier Degradation in Semiconductor Devices; Tibor Grasser Book 2015 Springer International Publishing Switzerland 2015 Degradation o

Concerto

Recovery from Hot Carrier Induced Degradation Through Temperature Treatmenther thick gate oxide and long channel which assures that mainly interface traps are created through the HC stress. We analyze the time and temperature dependence of the recovery of interface traps after HC stress using models from literature. The data is fairly consistent with the assumption of inte

critic

熄灭

Channel Hot Carriers in SiGe and Ge pMOSFETsode is of relevance for n-channel devices, while it is often neglected for p-channel devices whose reliability is typically limited by Negative Bias Temperature Instability (NBTI). However, for Ge-based p-channel, hot carrier effects are expected to worsen due to higher hole mobility and reduced cha

丰满中国

Channel Hot Carrier Degradation and Self-Heating Effects in FinFETson is at low vertical electric field stress (V. ∼ V./2) due to the interface degradation by hot carriers, while cold/hot carrier injection to the oxide bulk defect dominates at the high vertical field stress condition (V. = V.). In short channel devices, however, the most degraded condition is at hi

Paleontology

农学

Compact Modelling of the Hot-Carrier Degradation of Integrated HV MOSFETsMOSFETs embedded in smart-power integrated circuits. After introducing the basic functions and structure of those devices, we touch upon the practical aspects of the evaluation of their resilience to hot-carrier degradation, with particular reference to the undesired self-heating effect. A short rev

忙碌

Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistorses has come to the forefront due to its suitability for multiple applications ranging from high-performance analog to millimeter-wave applications. Hot-carrier induced reliability degradation mechanism is one of the primary issues that strongly defines the safe-operating area of a SiGe HBT device an

acheon

两种语言

NAVEN

Reliability Simulation Models for Hot Carrier Degradationracterization and reliability assessment in advanced CMOS technologies, Proceedings of the ESSDERC, 2010, pp. 64–72), circuit reliability simulation is becoming increasingly important. To enable reliability simulation, reliability simulation models are a prerequisite. These simulation models are oft