Titlebook: High-Frequency Bipolar Transistors; Michael Reisch Book 2003 Springer-Verlag Berlin Heidelberg 2003 CMOS.Modulation.bipolar junction trans

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Semiconductor Physics Required for Bipolar-Transistor Modelinglacement (or electric flux density) ., the magnetic field . and the magnetic induction (or magnetic flux density) .; the vector . describes the electric current density due to moving charges, and ρ describes the charge density.

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Femish

Physics and Modeling of Heterojunction Bipolar Transistorsthe emitter region exceeds the bandgap in the base region (.. > ..) fewer carriers will be injected into the emitter at a given transfer current density in comparison with a conventional transistor [.,.]: the current gain increases according to . as long as recombination in the base layer is negligi

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Noise Modelingelectronic devices. Generally we may distinguish between shot noise, due to fluctuations of the current associated with directed carrier motion, for example, caused by an applied electric field, and thermal noise (also termed diffusion noise or velocity fluctuation noise), due to the thermal motion

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乞讨

978-3-642-63205-1Springer-Verlag Berlin Heidelberg 2003

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ApplicationsIn this chapter, four important applications of high-frequency bipolar transistors — ECL digital circuits, high-speed optical data transmission systems, RF circuits and BiCMOS circuits — are briefly considered.

FER

https://doi.org/10.1007/978-3-642-55900-6CMOS; Modulation; bipolar junction transistor; drift transistor; heterojunction bipolar transistor; integ