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Titlebook: High-Frequency Bipolar Transistors; Michael Reisch Book 2003 Springer-Verlag Berlin Heidelberg 2003 CMOS.Modulation.bipolar junction trans

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书目名称High-Frequency Bipolar Transistors
编辑Michael Reisch
视频video
概述Hot topic in modern microelectronics.Fast single and integrated transistors as well as integrated bipolar circuits are treated.Includes supplementary material:
丛书名称Springer Series in Advanced Microelectronics
图书封面Titlebook: High-Frequency Bipolar Transistors;  Michael Reisch Book 2003 Springer-Verlag Berlin Heidelberg 2003 CMOS.Modulation.bipolar junction trans
描述This book provides a rather comprehensive presentation of the physics and modeling of high-frequency bipolar transistors with particular emphasis given to silicon-based devices. I hope it will be found useful by those who do as well as by those who intend to work in the field, as it compiles and extends material presented in numerous publications in a coherent fashion. I‘ve worked on this project for years and did my best to avoid errors. De­ spite all efforts it is possible that "something" has been overlooked during copy-editing and proof-reading. If you find a mistake please let me know. Michael Reisch Kempten, December 2002 Notation It is intended here to use the most widely employed notation, in cases where the standard textbook notation is different from the SPICE notation, the latter is used. In order to make formulas more readable, model parameters represented in SPICE by a series of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: • Time-dependent large-signal quantities a
出版日期Book 2003
关键词CMOS; Modulation; bipolar junction transistor; drift transistor; heterojunction bipolar transistor; integ
版次1
doihttps://doi.org/10.1007/978-3-642-55900-6
isbn_softcover978-3-642-63205-1
isbn_ebook978-3-642-55900-6Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer-Verlag Berlin Heidelberg 2003
The information of publication is updating

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Physics and Modeling of Heterojunction Bipolar Transistorshe emitter region, without losing too much current gain. This is of great importance for the realization of high-frequency bipolar transistors, since the extremely thin base widths of these devices require large doping concentrations in order to obtain reasonable values of base resistance and punchthrough voltage.
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Physics and Modeling of Bipolar Junction Transistorspact models. On the basis of these results, the most prominent compact models for large-signal and small-signal operation will be considered, together with a presentation of parameter extraction procedures.
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Book 2003s of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: • Time-dependent large-signal quantities a
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them. The proposed techniques apply to both combinational and sequential circuits and to circuits that contain a mix of control and datapath logic. In many applications, the degree of resilience often varies depending on the application context or the dataset being processed. In such cases, it is de
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