Titlebook: High Magnetic Fields in Semiconductor Physics III; Quantum Hall Effect, Gottfried Landwehr Conference proceedings 1992 Springer-Verlag Berl

CAPE

Ten Years of the Quantum Hall Effect: Development and Present State of the Theoryenon:.In this survey I will try to sketch the development of these approaches and to show their place in the present state of the theory. Furthermore, I would like to make a few comments on some recent investigations and to mention a few still unsolved problems..All of the approaches listed above re

虚度

V洗浴

Scaling Behaviour of Doped AlGaAs/GaAs Heterostructures in the Quantum Hall Regimearacteristic transport properties has been studied. The temperature dependent halfwidth of the Shubnikov-de Haas-peaks ΔB (T) and the maximum of the slope of the Hall resistance δρ. /δB (T) between adjacent Hall plateaus have been investigated in the temperature range from 1.1K down to 40 mK. We hav

Brochure

Magneto-Capacitance in Two-Dimensional Electronic Systems in AlxGa1−xAs/GaAs Heterostructures Under carrier density as evaluated from the Shubnikov de Haas-type oscillations indicates an impurity-specific filling of the lowest spin-split Landau level. We interpret this behavior with the bound states of impurities, which have to be taken into account when considering the degeneracy of the 2DEG in t

yohimbine

incarcerate

Electronic States in 2D Random Systems in High Magnetic Fieldson the fractal structures of delocalized states. The effect of confinement is discussed in connection with the behavior of edge states. The importance of the correlation length of disorder or the potential range of impurities in considering electronic structures is pointed out.

Abbreviate

circuit

Clumsy

The Frequency-Dependent Deformation of the Hall Plateause disorder broadened Landau levels. It is shown that there are corrections to the quantized values of σ. which are proportional to ω. and to the number of localized states in a given tail of the band. We relate our theoretical results to microwave experiments on GaAs-AlGaAs heterostructures.

不近人情

Multifractal Eigenstates in the Centre of Disorder Broadened Landau BandsEffect. The existence of states which are not exponentially localized is essential for an understanding of the transport properties. However, not much is known about the structure of these states [1–4].