Titlebook: High Magnetic Fields in Semiconductor Physics III; Quantum Hall Effect, Gottfried Landwehr Conference proceedings 1992 Springer-Verlag Berl

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Edge Channel Transport Under Quantum Hall Conditionsegime. By the use of two additional Schottky gates we have the possibility to electrically connect or disconnect two additional Hall probes to the region where first adiabatic transport is observed. The now experimentally observed change from adiabatic to equilibrated transport demonstrates the impo

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Effect of Disorder and Gate Barrier on Edge States well as the mixing among edge states in different Landau levels, are shown to depend strongly on correlation lengths of random potentials. The properties of edge states in the presence of a gate barrier are also presented. When the guiding center energy of the edge states in the .-th Landau level,

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Effect of Nondissipative Edge Currents on the Magnetoresistance of a Two-Dimensional Electron Gas at aspect ratio is equal to the difference of the Hall resistances: δR. =h/e... −R. (.), where .. is an integer corresponding to the nearest well developed quantum Hall state. Our model of nondissipative current flow near the sample edges, which dominates at low temperature and low currents, explains

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K. Broderix,N. Heldt,H. Leschkeelevant coverage. Illustrative case examples and an appendix of forms and checklists help make the book especially useful. .Featured in the text:. Developmental psychopathology of anxiety, anxiety disorders, de978-1-4614-3110-7

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