找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: ;

[复制链接]
楼主: mature
发表于 2025-3-28 15:52:48 | 显示全部楼层
发表于 2025-3-28 20:53:01 | 显示全部楼层
发表于 2025-3-29 01:38:39 | 显示全部楼层
Demonstration of 250 Gb/s All-Optical Routing Control of a Photonic Crossbar Switch-fast demultiplexer which examines the packet header without opto-electronic conversion and without reading the data in the packet’s payload. A low-power device capable of all-optical demultiplexing is the recently-developed Terahertz Optical Asymmetric Demultiplexer (TOAD)..
发表于 2025-3-29 04:35:47 | 显示全部楼层
发表于 2025-3-29 10:50:57 | 显示全部楼层
Monolithic Semiconductor MOPAs: How the Watt Was Wonto a hundred mW of output power, at which point reliability problems associated with the high optical intensity at the output facet begin to limit device performance. The simple solution to the problem of facet power density has been to increase the lateral dimension of the laser facet from 3–4 to h
发表于 2025-3-29 14:32:04 | 显示全部楼层
Multi-Wavelength Vertical Cavity Laser Arrays Grown on a Patterned Backup Substratelasers. The recent emergence of vertical cavity surface emitting laser (VCSEL) facilitates the fabrication such large 2D arrays. In this paper, I will review recent progress on a novel large-aperture single-mode VCSEL and a 2D multiple-wavelength VCSEL array for ultrahigh bandwidth applications. We
发表于 2025-3-29 18:34:33 | 显示全部楼层
发表于 2025-3-29 20:39:28 | 显示全部楼层
InP Based Multiple Quantum Well Lasers with an Integrated Tapered Beam Expander Waveguidell for higher confinement to the active region and — b) the optical mode emitted from the laser is not circular. This results in low overlap between the emitted optical mode of a conventional diode laser and the optical mode of the fiber. Furthermore, the low overlap between the optical modes impose
发表于 2025-3-30 00:30:17 | 显示全部楼层
Optimal Design of Combined Distributed-Feedback/Fabry-Perot Structures for Vertical Cavity Surface Esemiconductor lasers (VCSELs) using a self-consistent model based on coupled-wave equations and on the dependence of gain coupling on the threshold gain. Numerical results, carried out for the GaInAsP/InP material system, confirmed that a much lower threshold current density can be achieved in VCSEL
发表于 2025-3-30 05:41:11 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-7-6 03:13
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表