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Analysis of Gain Coupled DFB Semiconductor Lasers with Absorption Gratingicients dependence on AG thickness and on grating carrier density, are discussed in order to justify the new model, which solves selfconsistenly the rate equations for the carriers in active and AG layers with the cavity resonance conditions. Bistability in the ligth-current characteristics, linewid

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High-Speed Photonic Waveguide Switch Arrays and Optical Amplifier Gates in InGaAsP/InP for Communicaontenders for applications in optically transparent, broadband and high-speed fiber-optical local and wide area data and telecommunication and video distribution networks. The three-five compound semiconductor materials offer a wide variety of physical effects [1,2] and device concepts that can be e

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Soziologie - eine systematische Einführung availability and utilization of these devices, primarily those fabricated in LiNbO. and glass. There are now more than a dozen companies providing a large variety of standard and custom devices, which are being used in numerous field trials and in commercial systems. This review will focus on the a

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Soziologie Visueller Kommunikationated by a gap where the waveguiding action takes place. These kind of guides combine inherently both, wave guiding and modulation. The first version of these modulators were introduced back in 1971 [1], and required operation voltages of the order of 300 Volts. Later developments [2]–[4], allowed op

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