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,Political Leaders: India (1951–91),rphology, because they determine to a large extent the formation of defects, the distribution of impurities and, consequently, the structure-sensitive properties of the crystals. These aspects of growth have attracted much interest in recent years.

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Equilibrium Adsorption Layers on GaAs (111) and Si (111) Surfaces in CVD Growthproach to calculations dealing with adsorbed layers in growth systems involving chemical reactions, using the faces GaAs (111) and Si (111) in the systems Ga-As-H-Cl and Si-H-Cl, respectively, as specific illustrations.

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