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Field Emission Microscopic Study of Thermal Field- and Condensation-Induced Growth Forms of Crystal the Laplace pressure pγ = 2γ/r, slows down drastically when a certain curvature radius, r, of the tip is reached [2, 3]; this radius is a function of temperature and surface tension γ (for example, in tungsten tips the critical radius is about 10. cm).

insincerity

Protein Molecules and Crystals and inorganic substances. A globular protein molecule is a system consisting of 10.-10. atoms, built according to the genetic information inherited by a given organism; assembly of the molecules proceeds at the self-organization level. Globular protein molecules mav be crystallized, and the crystal

DIS

Equilibrium Adsorption Layers on GaAs (111) and Si (111) Surfaces in CVD Growth K must be covered almost completely by chlorine and hydrogen atoms and by SiCl. molecules [1] (later Chernov and Popkov studied the silicon system in more detail). A similar conclusion was drawn for the Si-H-Br system on the basis of similar but even cruder estimates [2] and for the system Si-H-Cl

cancellous-bone

Role of Adsorption Layer in Chemical Vapor Depositiondern microelectronics. At the same time the understanding of many details of the mechanism of crystal growth from the gas phase involving chemical reactions remains insufficient. The Burton-Cabrera-Frank theory of crystal growth from the crystal’s vapor cannot be directly applied to this case: the d

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esculent

Role of Defects in the Nucleation of Whiskers Growing from VaporIn fact, the beginning was the diffusion-dislocation model of Sears [1] which was an attempt to relate the nucleation and one-dimensional growth of whiskers to the non-disappearing step created by a screw dislocation on a substrate surface. For some time this model was widely accepted because of a n