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Some Aspects of Impurities in Wide Band Gap II-VI Compounds of matter, of vibrational states and of energy transport in crystals. Moreover the incorporation of impurities and their special behaviour is decisive for most of the technical devices based on II–VI-compounds. Besides of the luminescence many new experimental techniques have emerged during the las

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Photoassisted Doping of II-VI Semiconductor Filmsled substitutional doping of II–VI compound semiconductors. Substitutional doping of these materials has been a long standing problem which has severely limited their applications potential. The PAMBE technique gives rise to dramatic changes in the electrical properties of as-grown epilayers. In par

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Excitonic Complexes in Wide-Gap II-VI Semiconductors–VI semiconductors. Thus, tremendous efforts have been made to find out and describe excited states of free and, particularly, bound-exciton complexes, their excitation and decay mechanisms, and related scattering phenomena. This paper surveys recent results regarding bound-exciton complexes and the

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