找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: ;

[复制链接]
查看: 45553|回复: 65
发表于 2025-3-21 18:43:00 | 显示全部楼层 |阅读模式
书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors
编辑T. C. McGill,C. M. Sotomayor Torres,W. Gebhardt
视频video
丛书名称NATO Science Series B:
图书封面Titlebook: ;
出版日期Book 1989
版次1
doihttps://doi.org/10.1007/978-1-4684-5661-5
isbn_softcover978-1-4684-5663-9
isbn_ebook978-1-4684-5661-5Series ISSN 0258-1221
issn_series 0258-1221
The information of publication is updating

书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors影响因子(影响力)




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors影响因子(影响力)学科排名




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors网络公开度




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors网络公开度学科排名




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors被引频次




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors被引频次学科排名




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors年度引用




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors年度引用学科排名




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors读者反馈




书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors读者反馈学科排名




单选投票, 共有 1 人参与投票
 

1票 100.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 23:30:35 | 显示全部楼层
发表于 2025-3-22 02:42:07 | 显示全部楼层
发表于 2025-3-22 08:00:44 | 显示全部楼层
Excitonic Complexes in Wide-Gap II-VI Semiconductorsh allows for the development of comprehensive term schemes for neutral-impurity-exciton complexes in II–VI’s. Mainly three types of excited states exist for bound-exciton complexes: (i) states which are described through electronic excitation of one electron or hole, while the other particles involv
发表于 2025-3-22 11:27:40 | 显示全部楼层
发表于 2025-3-22 13:15:00 | 显示全部楼层
发表于 2025-3-22 20:31:57 | 显示全部楼层
Beverley Radcliffe,Jane Shackmanublished during the last years in this field [Schulz 82 and 87, Zunger 86] dealing especially with transition metals in II–VI-compounds. The reader is refered to these publications. It is therefore not the aim of this paper to cover the field of impurities in II–VIs entirely, but to discuss some gen
发表于 2025-3-23 00:48:22 | 显示全部楼层
https://doi.org/10.1007/978-1-4615-1559-3 laser diodes for high density memory and printing systems, one must rely on the wider-bandgap materials. Wide gap II–VI compounds, such as ZnSe, ZnS and ZnSSe, have long been expected as candidates for the purposes.
发表于 2025-3-23 03:07:46 | 显示全部楼层
发表于 2025-3-23 09:19:36 | 显示全部楼层
Inclusive Education in Trinidad and Tobago,h allows for the development of comprehensive term schemes for neutral-impurity-exciton complexes in II–VI’s. Mainly three types of excited states exist for bound-exciton complexes: (i) states which are described through electronic excitation of one electron or hole, while the other particles involv
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-22 12:15
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表