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楼主: 手镯
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https://doi.org/10.1007/978-3-319-00978-0or making graphene. Herein, we describe an intercalation method to make clean graphene that has good electrical properties. The new method is based on an earlier procedure to make expanded graphite. Our method leads to the production of graphene.
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Interface Electronic Differences Between Epitaxial Graphene Systems Grown on the Si and the C Face between . and . hybridization of the interface atoms. We find a strong preferential disposition towards an . hybridization for the case of the C face, whereas towards the . scheme for the Si face. Notwithstanding purely quantitative, this mismatch is important and reflects the strength of the . bond in Si and C.
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Strain Effect on the Electronic and Plasmonic Spectra of Graphene,itations. We evaluate of the dynamical polarization and recover the plasmonic spectrum, within the random phase approximation (RPA). We explicitly consider local field effects (LFE). Thus, we are able to account for plasmons of any wavelength as a function of strain.
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