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https://doi.org/10.1007/978-1-4899-8050-2ice. This arrangement is shown to be favored by progressive preferential sticking events, while its particular lattice symmetry guarantees the presence of a wide band gap. With the help of first principles DFT and many-body calculations we find this structure to be an insulator, similarly to graphan
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https://doi.org/10.1007/978-3-642-70544-1onic applications. However, hurdles such as strong electron doping and low carrier mobility might sensibly limit the prospects of graphene on SiC(0001). In this work we present and discuss two different approaches that allow for a precise tailoring of the band-structure of graphene on SiC(0001): non
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Understanding Chemical Reactivityaxial graphene/SiC interface in the case of Si and C face growth [i.e. growth on the SiC(0001) and the . surfaces respectively]. We argue that when the SiC substrate below the graphene films reconstructs with no additional adatoms, the observed electronic differences are the outcome of an interplay
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Molecular Theory of the Living Celleates an electric field perpendicular to the current flow and shifts energy levels of the two arms of the ring. A charge carrier being injected from the source at a given energy couples therefore to different states of the arms. Those states can be in or out of phase at the drain, resulting in inter
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Angela Karp,Peter G. Isaac,David S. Ingramain and dislocation formation. Two-dimensional crystal lattices, of which graphene is the archetype, are terminated by lines. The additional available dimension at such interfaces opens up a range of new topological interface possibilities. We show that graphene sheet edges can adopt a range of topo
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https://doi.org/10.1007/978-981-13-3633-1ns, for low levels of tensile and compressive strain. In tension, important physical phenomena such as the G and 2D band splitting are discussed. The results can be used to quantify the amount of uniaxial strain, providing a fundamental tool for graphene-based nanoelectronics. In compression, graphe
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