Titlebook: Gas Source Molecular Beam Epitaxy; Growth and Propertie Morton B. Panish,Henryk Temkin Book 1993 Springer-Verlag Berlin Heidelberg 1993 che

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Molecular Beam Epitaxy Systems and Procedures,n which epitaxial layers are grown under high vacuum conditions by causing a thermal flux of atoms or molecules, that constitute the elemental components of the epitaxial layer, to impinge and react upon the heated surface of a single crystal substrate. The substrate surface is the template for epit

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Optoelectronic Devices,with surprisingly low threshold current density were prepared by Liquid-Phase Epitaxy (LPE) by . and coworkers in 1975 [10.1], and by . in 1976 [10.2]. These first lasers operated at room temperature with the wavelengths of 1.02 and 1.1 µm. Lasers operating in the entire lattice matched range of qua

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In-Situ Processing and Selective Area Epitaxy,ness, composition and interface abruptness can be controlled very precisely. These parameters can be readily adjusted in the growth direction on a scale considerably finer than 0.01 µm. It is thus relatively easy to reach the size for which quantum mechanical phenomena resulting from one-dimensional

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