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Titlebook: Gas Source Molecular Beam Epitaxy; Growth and Propertie Morton B. Panish,Henryk Temkin Book 1993 Springer-Verlag Berlin Heidelberg 1993 che

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书目名称Gas Source Molecular Beam Epitaxy
副标题Growth and Propertie
编辑Morton B. Panish,Henryk Temkin
视频video
丛书名称Springer Series in Materials Science
图书封面Titlebook: Gas Source Molecular Beam Epitaxy; Growth and Propertie Morton B. Panish,Henryk Temkin Book 1993 Springer-Verlag Berlin Heidelberg 1993 che
出版日期Book 1993
关键词chemistry; diffraction; electronics; epitaxy; exciton; laser; optical communication; optical properties; opt
版次1
doihttps://doi.org/10.1007/978-3-642-78127-8
isbn_softcover978-3-642-78129-2
isbn_ebook978-3-642-78127-8Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer-Verlag Berlin Heidelberg 1993
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https://doi.org/10.1007/978-3-662-40377-8 type. While at high temperatures thermionic emission over barriers and phonon assisted tunneling may be dominant, at low temperatures carriers must tunnel through the barriers. The tunneling transport rates vary greatly with the carrier effective mass and thus very different mobilities are observed
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,Thoraxuntersuchung in Rückenlage (E/III),for lateral dimensions of less than 0.1 µm. This is still about a factor of four larger than the dimension needed to reach the regime of two-dimensional quantization. An added consideration is the condition of the surface, which has a large effect on the electrical and optical properties of small st
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Optoelectronic Devices,today: zero dispersion at λ = 1.3 µm and minimum loss at λ = 1.55 µm [10.4,5]. Finally, even the very early lasers fabricated from GaInAs/InP turned out to be very reliable [10.6–8]. By 1979 their reliability matched that of the much older and then more established GaAs/AlGaAs lasers [10.9]. Today,
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Optical Properties of Quantum Wells,e discussion of the optical properties of Ga.In.As.P. quantum wells we shall rely primarily on the results obtained on the structures grown by HSMBE with which we are most familiar. However, notable examples of the work carried out on structures grown by MOMBE and MOCVD [7.2–4] will also be discussed.
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