Titlebook: GaP Heteroepitaxy on Si(100); Benchmarking Surface Henning Döscher Book 2013 Springer International Publishing Switzerland 2013 Anti-phase

SLAY

Book 2013photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/

ARM

https://doi.org/10.1007/978-1-349-11821-2nd semiconductors, by chemical vapor deposition (CVD) processes. The required chemical elements for the formation of epitaxial layers are provided at the substrate surface by thermal decomposition (pyrolysis) of metal-organics or metal hydrides. In contrast to molecular beam epitaxy (MBE), the growt

CLIFF

Asseverate

https://doi.org/10.1007/978-3-319-66047-9 the crucial III–V/Si(100) interface. A variety of surface-sensitive methods was applied to establish suitable Si(100) substrate preparation and subsequent GaP growth free of anti-phase domains (APDs), by analyzing the substrate surface, the interface and the epitaxial film resulting from the hetero

HAUNT

https://doi.org/10.1007/978-3-319-02880-4Anti-phase Disorder; III-V Semiconductor Heteroepitaxy on Silicon Substrates; In Situ Reflectance Anis

值得赞赏

Brain-Imaging

暴露他抗议

GaP Heteroepitaxy on Si(100)978-3-319-02880-4Series ISSN 2190-5053 Series E-ISSN 2190-5061

关心

态度暖昧