| 书目名称 | GaP Heteroepitaxy on Si(100) |
| 副标题 | Benchmarking Surface |
| 编辑 | Henning Döscher |
| 视频video | |
| 概述 | Winner of a 2012 German Physical Society Dissertation Award.An important contribution to improving optoelectronic devices and performance of photovoltaic materials.Interesting for all experimentalists |
| 丛书名称 | Springer Theses |
| 图书封面 |  |
| 描述 | Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration. |
| 出版日期 | Book 2013 |
| 关键词 | Anti-phase Disorder; III-V Semiconductor Heteroepitaxy on Silicon Substrates; In Situ Reflectance Anis |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-319-02880-4 |
| isbn_softcover | 978-3-319-37955-5 |
| isbn_ebook | 978-3-319-02880-4Series ISSN 2190-5053 Series E-ISSN 2190-5061 |
| issn_series | 2190-5053 |
| copyright | Springer International Publishing Switzerland 2013 |
发表于 2025-3-21 18:04:51
