Titlebook: Evaluation of Advanced Semiconductor Materials by Electron Microscopy; David Cherns Conference proceedings 1989 Plenum Press, New York 198

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CHURL

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https://doi.org/10.1007/978-3-322-96330-7tunities to extract the relevant part of the information, thus simplifying the interpretation of the image. Several textbooks have appeared. which give an introduction into the subject of image processing in electron microscopy, with main applications in biology and organic materials. For these samp

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Psa617

Das definitorische Gerüst des Gesamtsystems. The fine structure of these superlattice reflections is characteristically different from the corresponding structure of fundamental reflections originating from the average lattice. These diffraction effects, induced by composition modulation, are discussed and compared with strain modulation eff

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,Abkürzungen und Formelzeichen,f the gap, (ϒ.-ϒ.)., at the dispersion surface. Most accurate may be those based upon measurement of the condition for zero gap, revaled by zero contrast of a Kikuchi or Kossel line. By measurement in non-systematic cases, measured either as a critical voltage or as a diffraction condition, the scop

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Anwendung von Modell VI als Dezisionsmodellassumed to have reached a steady-state equilibrium at a particular temperature such that the rate of capture at a sink exactly balances the rate of evaporation from the sink by thermal excitation. Subsequent rapid cooling to room temperature does not significantly alter the segregation profile. A si